Multi-Sizes Multi-Brightnesses 260nm-280nm Ultraviolet UV LED Pacakge, High Power 3-7MW 3535 UVA UVC LED Lamp Beads Package with Rosh Reach - China LED Lamp Beads Package with Rosh Reach, High Power 3-7MW
Basis for improved UV LEDs – high-quality aluminum nitride by high-temperature annealing | Ferdinand-Braun-Institut
Improved Emission Efficiency of 210-nm Deep-ultraviolet Aluminum Nitride Light-emitting Diode | NTT Technical Review
Aluminum Nitride (AlN) Technology Overview - Crystal IS - CISUVC
Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources | Scientific Reports
Epileds and HPL Jointly Launched the Bioraytron Brand UVC LED Products — LED professional - LED Lighting Technology, Application Magazine
Osram broadens horizons into deep-UV LEDs
Aluminum Nitride LED Produces 210-nm Radiation | Features | Jul 2006 | Photonics Spectra
GaN/AlN quantum-disk nanorod 280 nm deep ultraviolet light emitting diodes by molecular beam epitaxy
Semiconductor Today
Fabrication technology for high light-extraction ultraviolet thin-film flip-chip (UV TFFC) LEDs grown on SiC
UVC LEDs on Bulk AlN Substrates Using Silicon Nanomembranes for Efficient Hole Injection
Aluminum Nitride Light Emitting Diodes with the Shortest Wavelength｜NTT Basic Research Laboratories | NTT R&D Website
UV LED fabrication process illustration. (a) Begin with a finished... | Download Scientific Diagram
UVC LEDs on Bulk AlN Substrates Using Silicon Nanomembranes for Efficient Hole Injection
UVC LEDs on Bulk AlN Substrates Using Silicon Nanomembranes for Efficient Hole Injection
Photonics | Free Full-Text | Perspectives on UVC LED: Its Progress and Application | HTML
World's first hBN-based deep ultraviolet LED | EurekAlert!
Improved Emission Efficiency of 210-nm Deep-ultraviolet Aluminum Nitride Light-emitting Diode | NTT Technical Review
Using Aluminum Nitride (AlN) to Access UVC Wavelengths - Klaran
Vertical semiconductor deep ultraviolet light emitting diodes on a nanowire-assisted aluminum nitride buffer layer | Scientific Reports
13 mW operation of a 295–310 nm AlGaN UV-B LED with a p-AlGaN transparent contact layer for real world applications - Journal of Materials Chemistry C (RSC Publishing) DOI:10.1039/C8TC03825B
Understanding high efficiency of deep ultraviolet LEDs | Asia Research News
Improved Emission Efficiency of 210-nm Deep-ultraviolet Aluminum Nitride Light-emitting Diode | NTT Technical Review
